Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs
Author:
Affiliation:
1. U.S. Army DEVCOM-Army Research Laboratory, Adelphi, MD, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9901396/09861393.pdf?arnumber=9861393
Reference25 articles.
1. On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs
2. Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs
3. Bias Temperature Instability of Silicon Carbide Power MOSFET under AC Gate Stresses
4. AC-Stress Degradation and Its Anneal in SiC MOSFETs
5. Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors
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4. Characterization of Threshold Voltage Shift in SiC MOSFETs Under Nanosecond-Range Switching and Its Impact on High- Frequency Applications;IEEE Transactions on Electron Devices;2024-07
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