Accurate Evaluation of Threshold Voltage Hysteresis in SiC MOSFET Under Switching Stress
Author:
Affiliation:
1. State the School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/63/10679334/10547474.pdf?arnumber=10547474
Reference12 articles.
1. Review of Silicon Carbide Power Devices and Their Applications
2. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
3. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs
4. Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs
5. A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching
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