Temperature-Compensated MOS Dosimeter Fully Integrated in a High-Voltage 0.35 μm CMOS Process-Reference-Cited by-同舟云学术

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Temperature-Compensated MOS Dosimeter Fully Integrated in a High-Voltage 0.35 μm CMOS Process

Published:2020-06 Issue:6 Volume:67 Page:1118-1124
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Carbonetto Sebastian^ORCID,Echarri Martin^ORCID,Lipovetzky Jose^ORCID,Garcia-Inza Mariano,Faigon Adrian

Funder

Agencia Nacional de Promoción Científica y Tecnológica

Universidad de Buenos Aires

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9121776/08959200.pdf?arnumber=8959200

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current;Microelectronics Reliability;2022-10

2. Design of Core Gate Silicon Nanotube RADFET with Improved Sensitivity;ECS Journal of Solid State Science and Technology;2022-07-29

3. Sensitivity and fading of irradiated RADFETs with different gate voltages;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2022-04

4. Analytical Modeling of Core–Shell Junctionless RADFET dosimeter of Improved Sensitivity;Silicon;2022-01-22

5. Total Ionizing Dose Effects on Floating Gate Structures. Preliminary Results.;2021 IEEE 22nd Latin American Test Symposium (LATS);2021-10-27

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