Dynamic State-Retention Flip-Flop for Fine-Grained Power Gating With Small Design and Power Overhead-Reference-Cited by-同舟云学术

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Dynamic State-Retention Flip-Flop for Fine-Grained Power Gating With Small Design and Power Overhead

Published:2006-07 Issue:7 Volume:41 Page:1654-1661
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Henzler S.,Georgakos G.,Eireiner M.,Nirschl T.,Pacha C.,Berthold J.,Schmitt-Landsiedel D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/34474/01644877.pdf?arnumber=1644877

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensing in Ferroelectric Memories and Flip-Flops;Sensing of Non-Volatile Memory Demystified;2018-08-11

2. Ferroelectric Transistor based Non-Volatile Flip-Flop;Proceedings of the 2016 International Symposium on Low Power Electronics and Design;2016-08-08

3. Power-Gating for Leakage Control and Beyond;Circuit Design for Reliability;2014-10-16

4. High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction;Japanese Journal of Applied Physics;2012-02-20

5. High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction;Japanese Journal of Applied Physics;2012-02-01

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