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High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction

  • Published:2012-02-01 Issue:2S Volume:51 Page:02BD01
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohsawa Takashi,Iga Fumitaka,Ikeda Shoji,Hanyu Takahiro,Ohno Hideo,Endoh Tetsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanotechnology and Computer Science: Trends and advances;Memories - Materials, Devices, Circuits and Systems;2022-10

2. Spin-Transfer Torque Magnetic Tunnel Junction Model Based on Fokker-Planck Equation for Stochastic Circuit Simulations;2022 IEEE 22nd International Conference on Nanotechnology (NANO);2022-07-04

3. An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application;Advanced Electronic Materials;2021-08-16

4. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology;Advances in Non-Volatile Memory and Storage Technology;2019

5. Programming scheme based optimization of hybrid 4T-2R OxRAM NVSRAM;Semiconductor Science and Technology;2017-08-29
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