Author:
Hanyu T.,Endoh T.,Ando Y.,Ikeda S.,Fukami S.,Sato H.,Koike H.,Ma Y.,Suzuki D.,Ohno H.
Reference152 articles.
1. Magnetic tunnel junction for nonvolatile CMOS logic;Ohno,2010
2. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-RAM;Hosomi,2005
3. 2 Mb SPRAM (SPin-Transfer Torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read;Kawahara;IEEE J. Solid State Circuits,2008
4. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM;Kishi,2008
5. A 32-Mb SPRAM with 2T1R memory cell, localized bi-directional write driver and ‘1’/‘0’ dual-array equalized reference scheme;Takemura;IEEE J. Solid-State Circuits,2010
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献