A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers-Reference-Cited by-同舟云学术

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A 128-kb FeRAM macro for contact/contactless smart-card microcontrollers

Published:2002-08 Issue:8 Volume:37 Page:1073-1079
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yamada J.,Miwa T.,Koike H.,Toyoshima H.,Amanuma K.,Kobayashi S.,Tatsumi T.,Maejima Y.,Hada H.,Mori H.,Takahashi S.,Takeuchi H.,Kunio T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/21945/01020247.pdf?arnumber=1020247

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices;ACS Applied Electronic Materials;2021-06-30

2. Programming scheme based optimization of hybrid 4T-2R OxRAM NVSRAM;Semiconductor Science and Technology;2017-08-29

3. Overview and Scaling Prospect of Ferroelectric Memories;CMOS Processors and Memories;2010

4. A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller;IEEE Journal of Solid-State Circuits;2006-09

5. Design of 0.25 μm 2.7 V 2T2C 4 Mb asynchronous ferroelectric random access memory (FRAM) for mobile applications;Current Applied Physics;2004-02

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