A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology-Reference-Cited by-同舟云学术

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A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology

Published:2009-01 Issue:1 Volume:44 Page:148-154
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Hamzaoglu Fatih,Zhang Kevin,Wang Yih,Ahn Hong Jo,Bhattacharya Uddalak,Chen Zhanping,Ng Yong-Gee,Pavlov Andrei,Smits Ken,Bohr Mark

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4735533/04735550.pdf?arnumber=4735550

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