A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Software
Link
http://xplorestaging.ieee.org/ielx7/92/9104037/09061137.pdf?arnumber=9061137
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 47 TOPS/W 10T SRAM-Based Multi-Bit Signed CIM With Self-Adaptive Bias Voltage Generator for Edge Computing Applications;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-09
2. BP-SCIM: A Reconfigurable 8T SRAM Macro for Bit-Parallel Searching and Computing In-Memory;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-05
3. An Energy-Efficient Hybrid SRAM-Based In-Memory Computing Macro for Artificial Intelligence Edge Devices;Circuits, Systems, and Signal Processing;2023-01-14
4. A 9 T SRAM cell with data-independent read bitline leakage and improved read sensing margin for low power applications;Semiconductor Science and Technology;2022-03-17
5. A review on SRAM-based computing in-memory: Circuits, functions, and applications;Journal of Semiconductors;2022-03-01
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