A review on SRAM-based computing in-memory: Circuits, functions, and applications

Author:

Lin Zhiting,Tong Zhongzhen,Zhang Jin,Wang Fangming,Xu Tian,Zhao Yue,Wu Xiulong,Peng Chunyu,Lu Wenjuan,Zhao Qiang,Chen Junning

Abstract

Abstract Artificial intelligence (AI) processes data-centric applications with minimal effort. However, it poses new challenges to system design in terms of computational speed and energy efficiency. The traditional von Neumann architecture cannot meet the requirements of heavily data-centric applications due to the separation of computation and storage. The emergence of computing in-memory (CIM) is significant in circumventing the von Neumann bottleneck. A commercialized memory architecture, static random-access memory (SRAM), is fast and robust, consumes less power, and is compatible with state-of-the-art technology. This study investigates the research progress of SRAM-based CIM technology in three levels: circuit, function, and application. It also outlines the problems, challenges, and prospects of SRAM-based CIM macros.

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. In‐memory multibit multiplication and accumulation based on an automatic pulse generation circuit;Electronics Letters;2023-11

2. An 8T PA Attack Resilient NVSRAM for In-Memory-Computing Applications;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-09

3. Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3;Advanced Functional Materials;2023-07-26

4. SRAM-Based In-Memory Computing: Circuits, Functions, and Applications;In-Memory Computing Hardware Accelerators for Data-Intensive Applications;2012-02-24

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