A real-time and energy-efficient SRAM with mixed-signal in-memory computing near CMOS sensors
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Published:2024-07-31
Issue:4
Volume:21
Page:
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ISSN:1861-8200
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Container-title:Journal of Real-Time Image Processing
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language:en
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Short-container-title:J Real-Time Image Proc
Author:
Diaz-Madrid Jose-Angel,Domenech-Asensi Gines,Ruiz-Merino Ramon,Zapata-Perez Juan-Francisco
Abstract
AbstractIn-memory computing (IMC) represents a promising approach to reducing latency and enhancing the energy efficiency of operations required for calculating convolution products of images. This study proposes a fully differential current-mode architecture for computing image convolutions across all four quadrants, intended for deep learning applications within CMOS imagers utilizing IMC near the CMOS sensor. This architecture processes analog signals provided by a CMOS sensor without the need for analog-to-digital conversion. Furthermore, it eliminates the necessity for data transfer between memory and analog operators as convolutions are computed within modified SRAM memory. The paper suggests modifying the structure of a CMOS SRAM cell by incorporating transistors capable of performing multiplications between binary (−1 or +1) weights and analog signals. Modified SRAM cells can be interconnected to sum the multiplication results obtained from individual cells. This approach facilitates connecting current inputs to different SRAM cells, offering highly scalable and parallelized calculations. For this study, a configurable module comprising nine modified SRAM cells with peripheral circuitry has been designed to calculate the convolution product on each pixel of an image using a $$3 \times 3$$
3
×
3
mask with binary values (−1 or 1). Subsequently, an IMC module has been designed to perform 16 convolution operations in parallel, with input currents shared among the 16 modules. This configuration enables the computation of 16 convolutions simultaneously, processing a column per cycle. A digital control circuit manages both the readout or memorization of digital weights, as well as the multiply and add operations in real-time. The architecture underwent testing by performing convolutions between binary masks of 3 × 3 values and images of 32 × 32 pixels to assess accuracy and scalability when two IMC modules are vertically integrated. Convolution weights are stored locally as 1-bit digital values. The circuit was synthesized in 180 nm CMOS technology, and simulation results indicate its capability to perform a complete convolution in 3.2 ms, achieving an efficiency of 11,522 1-b TOPS/W (1-b tera-operations per second per watt) with a similarity to ideal processing of 96%.
Publisher
Springer Science and Business Media LLC
Reference18 articles.
1. Verma, N., et al.: In-memory computing: advances and prospects. IEEE Solid-State Circuits Mag. 11(3), 43–55 (2019). https://doi.org/10.1109/MSSC.2019.2922889 2. Shanbhag, N.R., Roy, S.K.: Comprehending in-memory computing trends via proper benchmarking. In: 2022 IEEE Custom Integrated Circuits Conference (CICC), Newport Beach, CA, USA, 2022, pp. 1–7. https://doi.org/10.1109/CICC53496.2022.9772817 3. Nguyen, H.A.D., Yu, J., Lebdeh, M.A., Taouil, M., Hamdioui, S., Catthoor, F.: A classification of memory-centric computing. ACM J. Emerg. Technol. Comput. Syst. 16(2), 1–26 (2020). https://doi.org/10.1145/3365837 4. Lin, Z., Tong, Z., Zhang, J., Wang, F., Xu, T., Zhao, Y., Wu, X., Peng, C., Lu, W., Zhao, Q.: A review on SRAM-based computing in-memory: circuits, functions, and applications. J. Semicond. 43(3), 031401 (2022). https://doi.org/10.1088/1674-4926/43/3/031401 5. Valavi, H., Ramadge, P.J., Nestler, E., Verma, N.: A 64-tile 2.4-Mb in-memory-computing CNN accelerator employing charge-domain compute. IEEE J. Solid-State Circuits 54(6), 1789–1799 (2019). https://doi.org/10.1109/JSSC.2019.2899730
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