AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD Wafers-Reference-Cited by-同舟云学术

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AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD Wafers

Published:1985-03 Issue:3 Volume:6 Page:154-156
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Takanashi Y.,Kobayashi N.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31937/01485231.pdf?arnumber=1485231

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Devices;Organometallic Vapor-Phase Epitaxy;1999

2. Deep-submicron HEMT technology;Microelectronics Journal;1993-12

3. GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane;Applied Physics Letters;1991-10-14

4. Ultrahigh-speed HEMT LSI technology for supercomputer;IEEE Journal of Solid-State Circuits;1991

5. Chapter 4 High Electron Mobility Transistor and LSI Applications;Very High Speed Integrated Circuits: Heterostructure;1990

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