GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106154
Reference14 articles.
1. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane
2. MOVPE growth of AlGaAs using trimethylamine alane
3. Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane
4. Growth of low carbon content AlxGa1−xAs by reduced pressure MOVPE using trimethylamine alane
5. GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependence of THz emission and junction electric field of GaAs–AlGaAs modulation-doped heterostructures with different i-AlGaAs spacer layer thicknesses;Journal of Materials Science: Materials in Electronics;2018-03-15
2. Growth study of AlGaAs using dimethylethylamine alane as the aluminum precursor;Journal of Electronic Materials;1997-10
3. Low oxygen and carbon incorporation in AIGaAs using tritertiarybutylaluminum in organometallic vapor phase epitaxy;Journal of Electronic Materials;1996-05
4. Electrical characterization of AlxGa1−xAs grown by low‐pressure organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor;Applied Physics Letters;1995-01-09
5. The growth of GaAs/AlxGa1-xAs with DEA1H-NMe3 as Al source and MEAs and DMAAs as liquid As compounds;Journal of Crystal Growth;1994-12
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