1. New technology towards GaAs LSI/VLSI for computer applications;Abe;IEEE Transactions on Electron Devices,1982
2. A new field-effect transistor with selectively doped GaAs/n-AlxGa1−xAs heterojunctions;Mimura;Japanese Journal of Applied Physics,1980
3. Japanese Technology Review, Electronics;Abe,1989
4. A 1·2 ns HEMT 64 kb SRAM;Suzuki;ISSCC Technical Digest,1991
5. A 45 k HEMT gate array with 35 ps DCFL and 50 ps BDCFL gates;Notomi;ISSCC Technical Digest,1991