Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology-Reference-Cited by-同舟云学术

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Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology

Published:2018-10 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Reiner Richard¹,Waltereit Patrick¹,Moench Stefan¹,Dammann Michael¹,Weiss Beatrix¹,Quay Rudiger¹,Ambacher Oliver¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, Freiburg, 79108, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8554989/8569038/08569168.pdf?arnumber=8569168

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation;2023 International Conference on IC Design and Technology (ICICDT);2023-09-25

2. GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

3. A Configuration of 3-phase Traction Inverter Employing {SiC} Devices;2022 IEEE 16th International Conference on Compatibility, Power Electronics, and Power Engineering (CPE-POWERENG);2022-06-29

4. Experimental investigation on a cascode-based three-phase inverter for AC drives;2021 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);2021-11-17

5. Building Blocks for GaN Power Integration;IEEE Access;2021

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