The Investigation of Source Field Plate on the Performance of pGaN Gate Device and Dual-Gate Bidirectional Switch using TCAD Simulation
Author:
Affiliation:
1. Xi’an Jiaotong-Liverpool University,School of Advanced Technology,Suzhou,China,215123
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10332255/10332256/10332430.pdf?arnumber=10332430
Reference13 articles.
1. GaN-based power devices: Physics, reliability, and perspectives
2. GaN-on-Si Power Technology: Devices and Applications
3. Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology
4. Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure
5. Field-Plate Engineering for HFETs
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