A BJT-Based Temperature-to-Frequency Converter With ± 1°C (3\Σ) Inaccuracy From – 40 °C to 140 °C for On-Chip Thermal Monitoring-Reference-Cited by-同舟云学术

A BJT-Based Temperature-to-Frequency Converter With ± 1°C (3\Σ) Inaccuracy From – 40 °C to 140 °C for On-Chip Thermal Monitoring

Published:2022-10 Issue:10 Volume:57 Page:2909-2918
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Park Jee-Ho¹^ORCID,Hwang Jung-Hye¹,Shin Changyong¹,Kim Seong-Jin¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Ulsan National Institute of Science and Technology, Ulsan, South Korea

Funder

Korea Government (MSIT) through the project Development of 5G-Based 3D Spatial Scanning Device Technology for Virtual Space Composition

Korea Government (MOTIE) through HRD Program for Industrial Innovation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9900477/09801842.pdf?arnumber=9801842

Reference28 articles.

1. A CMOS Temperature Sensor With a Voltage-Calibrated Inaccuracy of $\pm$0.15$ ^{\circ}$C (3$\sigma$) From $-$55$^{\circ}$C to 125$^{\circ}$C

2. A 0.12 mm$^{2}$ 7.4 $\mu$W Micropower Temperature Sensor With an Inaccuracy of $\pm$0.2$^{\circ}$C (3$\sigma$) From $-$30$^{\circ}$C to 125$^{\circ}$C

3. A Time-Domain Band-Gap Temperature Sensor in SOI CMOS for High-Temperature Applications

4. An 18.75 $\mu\text{W}$ dynamic-distributing-bias temperature sensor with $0.87^{\circ}\text{C}$ ($3\sigma$ ) untrimmed inaccuracy and 0.00946 mm2 area;hsu;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2017

5. A BJT-based CMOS temperature sensor with a 3.6pJ$\cdot\text{K}^{2}$ -resolution FoM;heidary;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2014

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