Affiliation:
1. School of Electronics and Communication Engineering, Guangzhou University, Guangzhou 510006, China
2. Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Guangzhou University, Guangzhou 510006, China
Abstract
A high resolution, acceptable accuracy and low power consumption time-domain temperature sensor is proposed and simulated in this paper based on a 180 nm standard CMOS technology. A diode stacking structure is introduced to enhance the accuracy of the temperature sensing core. To improve the resolution of the sensor, a dual-input capacitor multiplexing voltage-to-time converter (VTC) is implemented. Additionally, a low-temperature drift voltage-mode relaxation oscillator (ROSC) is proposed, effectively reducing the large oscillation frequency drift caused by significant temperature impacts on delay errors. The simulated results show that the resolution is as high as 0.0071 °C over 0∼120 °C with +0.43 °C/−0.38 °C inaccuracy and 1.9 pJ · K2 resolution FoM, consuming only 1.48 μW at a 1.2 V supply voltage.
Funder
Natural Science Foundation of Guangdong Province, China
Science and Technology Project of Guangzhou
Special Projects in Key Fields of Guangdong Education Department
National College Students Innovation and Entrepreneurship Training Program
Special Fund Project for Science and Technology Innovation Strategy of Guangdong Province
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