M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability
Author:
Affiliation:
1. School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Funder
Key-Area Research and Development Program of Guangdong Province
NSFC
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9741089/09726226.pdf?arnumber=9726226
Reference39 articles.
1. Integrated Flexible Ga 2 O 3 Deep UV Photodetectors Powered by Environmental Electromagnetic Radiation Energy
2. Room-Temperature Fabricated Amorphous Ga2 O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates
3. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector
4. High responsivity in molecular beam epitaxy grown $\alpha$ -Ga2O3 metal semiconductor metal solar blind deep-UV photodetector;pratiyush;Appl Phys Lett,2017
5. Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector
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