Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit
Author:
Affiliation:
1. KBR, Inc., Beavercreek, OH, USA
2. Air Force Research Laboratory, Sensors Directorate, Dayton, OH, USA
3. Teledyne Scientific Company, Thousand Oaks, CA, USA
4. Department of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
Funder
Air Force Research Laboratory
AFOSR/Cornell Center of Excellence
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9841091/09794776.pdf?arnumber=9794776
Reference31 articles.
1. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
2. Maximizing the performance of 650 V p-GaN gate HEMTs: Dynamic ron characterization and gate-drive design considerations
3. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
4. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
5. Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2
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