Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique-Reference-Cited by-同舟云学术

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Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique

Published:2022-10 Issue:10 Volume:43 Page:1641-1644
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yin Yidi¹^ORCID,Pinchbeck Joseph¹,O'Regan Colm²,Guiney Ivor³,Wallis David J.³,Lee Kean Boon¹^ORCID

Affiliation:

1. Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, U.K.

2. Department of Materials Science and Engineering, Sorby Centre for Electron Microscopy, The University of Sheffield, Sheffield, U.K.

3. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, U.K.

Funder

U.K. Engineering and Physical Sciences Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09874857.pdf?arnumber=9874857

Reference30 articles.

1. Activation of buried p-GaN in MOCVD-regrown vertical structures

2. Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

3. A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

4. Crystallographic wet chemical etching of GaN

5. Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

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1. CMOS-compatible 6-inch wafer integration of photonic waveguides and uniformity analysis;Optics Express;2024-02-13

2. Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs;Applied Physics Express;2024-02-01

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