Real EOFF as a factor in design of soft-switched DC-DC converters with SiC MOSFET power modules
Author:
Affiliation:
1. Institute of Control and Industrial Electronics, Warsaw University of Technology,Warsaw,Poland
2. Ikerlan Technology Research Center,Power Electronics Area,Arrasate-Mondragón,Spain
3. CAF Power & Automation,San Sebastián,Spain
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9947299/9947300/09947303.pdf?arnumber=9947303
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dwugałęziowy przekształtnik prądu stałego z tranzystorami SiC MOSFET do bateryjnego magazynu energii o napięciu 1.5 kV;PRZEGLĄD ELEKTROTECHNICZNY;2024-01-28
2. Experimental Investigation on SiC MOSFET Turn-Off Power Loss Reduction Using the Current Sink Capacitor Technique;Energies;2023-12-29
3. Influence of parasitics of components and circuit on switching losses of power SiC and GaN transistors in power converter applications;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
4. From the Measurement of C OSS–V DS Characteristic to the Estimation of the Channel Current in Medium Voltage SiC MOSFET Power Modules;IEEE Transactions on Instrumentation and Measurement;2023
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