From the Measurement of C OSS–V DS Characteristic to the Estimation of the Channel Current in Medium Voltage SiC MOSFET Power Modules-Reference-Cited by-同舟云学术

From the Measurement of C _OSS–V _DS Characteristic to the Estimation of the Channel Current in Medium Voltage SiC MOSFET Power Modules

Published:2023 Issue: Volume:72 Page:1-10
ISSN:0018-9456
Container-title:IEEE Transactions on Instrumentation and Measurement
language:
Short-container-title:IEEE Trans. Instrum. Meas.

Author:

Rąbkowski Jacek¹^ORCID,Zdanowski Mariusz¹^ORCID,Kopacz Rafał¹^ORCID,Gonzalez-Hernando Fernando²^ORCID,Villar Irma²^ORCID,Larrañaga Uxue³^ORCID

Affiliation:

1. Institute of Control and Industrial Electronics, Warsaw University of Technology, Warsaw, Poland

2. Ikerlan Technology Research Center, Basque Research and Technology Alliance (BRTA), Arrasate-Mondragón, Spain

3. CAF Power & Automation, San Sebastián, Spain

Funder

Shift2Rail Joint Undertaking through the European Union’s Horizon 2020 Research and Innovation Programme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/19/10012124/10172071.pdf?arnumber=10172071

Reference34 articles.

1. Measurement of Coss-V characteristic of the 1.7 kV/900 A SiC power module and estimation of the channel current;rabkowski;Proc 24th Eur Conf Power Electron Appl,2022

2. A 3.3 kV/800 a ultra-high power density SiC power module;ishigaki;Proc PCIM Eur Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage,2018

3. 3.3 kV/450 a full-SiC nHPD2 (next high power density dual) with smooth switching;ishigaki;Proc PCIM Eur Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage,2017

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3. Experimental Investigation on SiC MOSFET Turn-Off Power Loss Reduction Using the Current Sink Capacitor Technique;Energies;2023-12-29