Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs-Reference-Cited by-同舟云学术

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Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs

Published:2022-10-09 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Kumar Ashish¹,Bhattacharya Subhashish¹,Baliga Jayant¹

Affiliation:

1. Electrical and Computer Engineering, North Carolina State University,Raleigh,NC

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9947299/9947300/09947390.pdf?arnumber=9947390

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions;Energies;2024-05-30

2. Dynamic Performance Comparison of SiC Power Modules With and Without Schottky Diode Operating from 25 to 250°C Junction Temperature;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18

5. A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching;Micromachines;2023-06-22

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