Sub-0.5 ns Step, 10-bit Time Domain Digital Gate Driver IC for Reducing Radiated EMI and Switching Loss of SiC MOSFETs
Author:
Affiliation:
1. The University of Tokyo,Tokyo,Japan
2. Mitsubishi Electric Corporation,Hyogo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9947299/9947300/09947890.pdf?arnumber=9947890
Reference10 articles.
1. A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI
2. Digital Gate Driving (DGD) is Double-Edged Sword: How to Avoid Huge Voltage Overshoots Caused by DGD for GaN FETs
3. Automatic Generation of Gate Driving Vectors for Digital Gate Drivers to Satisfy EMI Regulations
4. A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control
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1. Digital Active Gate Driving Automatically Minimizing Switching Loss While Keeping Surge Current Below User-Specified Target;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
2. Active Gate Driving With Full 6-Bit Resolution for Different SiC MOSFETs Using Variable Gate Current Range Digital Gate Driver IC;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. Operation Point based Optimization of Switching Losses with Current-Source Gate Driver for SiC-based Power Modules;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
4. Variable Gate Current Range Digital Gate Driver IC Always Providing 6-bit Controllability in Various IGBTs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
5. Large-Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot;IEEE Transactions on Power Electronics;2023-07
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