650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology-Reference-Cited by-同舟云学术

650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

Published:2022-04 Issue:4 Volume:43 Page:592-595
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Yuzhou¹^ORCID,Li Zehong¹^ORCID,Pan Jia²,Chen Chong²,Yu Jiuying³,Ren Min¹,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. Shanghai Super Semiconductor Technology Company Ltd., Shanghai, China

3. Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, China

Funder

Science and Technology Program Project of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9741089/09721852.pdf?arnumber=9721852

Reference16 articles.

1. Experimental investigation of 650V superjunction IGBTs

2. An Ultralow Loss Superjunction Reverse Blocking Insulated-Gate Bipolar Transistor With Shorted-Collector Trench

3. A Carrier-Storage-Enhanced Superjunction IGBT With Ultralow Loss and On-State Voltage

4. Turn-OFF Transient Analysis of Superjunction IGBT

5. The Soft $\hbox{Punchthrough}+$ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection

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