Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor-Reference-Cited by-同舟云学术

Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

Published:2022-07 Issue:7 Volume:43 Page:1001-1004
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shin Wonjun¹^ORCID,Koo Ryun-Han¹,Hong Seongbin¹^ORCID,Kwon Dongseok¹^ORCID,Hwang Joon¹^ORCID,Park Byung-Gook¹^ORCID,Lee Jong-Ho¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Seoul National University, Inter-University Semiconductor Research Center (ISRC), Seoul, South Korea

Funder

BK21 FOUR program of the Education and Research Program for Future ICT Pioneers

National Research Foundation of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9811240/09778019.pdf?arnumber=9778019

Reference30 articles.

1. Effects of Postdeposition Annealing Ambience on NO₂ Gas Sensing Performance in Si-Based FET-Type Gas Sensor

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3. A new saw-like self-recovery of interface states in nitride-based memory cell;sung;IEDM Tech Dig,2014

4. Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

5. Improved Self-Curing Effect in a MOSFET With Gate Biasing

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