Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy

Author:

Shin Wonjun1ORCID,Shin Jihyun2ORCID,Lee Jong-Ho13ORCID,Yoo Hocheon2,Lee Sung-Tae4ORCID

Affiliation:

1. Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University 1 , Seoul 08826, South Korea

2. Department of Electronic Engineering, Gachon University 2 , Seongnam-si 13120, South Korea

3. Ministry of Science and ICT 3 , Sejong 30121, South Korea

4. Department of Electronic and Electrical Engineering, Hongik University 4 , Seoul 04066, South Korea

Abstract

This study examines the low-frequency noise characteristics of the 2,7-dioctyl[1] benzothieno[3,2-b][1] benzothiophene organic thin-film transistor (OTFT) having a CYTOP dielectric layer. Specifically, the fabricated OTFT exhibits 1/f noise, and its behavior is explained via a carrier number fluctuation model. Additionally, the volume trap density (NT) of the gate dielectric is quantitatively evaluated and compared with its counterpart having SiO2 dielectric layer. The analysis of the results shows that the hydrophilic entities of the dielectric layer strongly influence the NT, while the CYTOP having hydrophobic properties provides less NT than that of SiO2.

Funder

BK 21 FOUR program

Gachon University

National Research Foundation of Korea

Hongik University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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