Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection
Author:
Affiliation:
1. Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
2. Department of Mechanical Engineering, University of South Carolina, Columbia, SC, USA
Funder
Department of Energy (DOE) Office of Nuclear Energy’s Nuclear Energy University Program
Advanced Support Program for Innovative Research Excellence-I &-II (ASPIRE-I & ASPIRE-II) of the University of South Carolina (UofSC), Columbia, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/55/9866921/9815300-aam.pdf
Reference33 articles.
1. A self-biased neutron detector based on an SiC semiconductor for a harsh environment
2. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
3. High-resolution short range ion detectors based on 4H-SiC films
4. Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors
5. Silicon Carbide Detectors for in vivo Dosimetry
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1. Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS Junction;IEEE Transactions on Electron Devices;2023-12
2. High Resolution Metal-Oxide-4H-SiC detectors with various high-kdielectric oxide layers;2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD);2023-11-04
3. Effect of Enhanced Hole Transport on the Performance of Ni/Y2O3/n-4H-SiC Epilayer Radiation Detectors;IEEE Transactions on Nuclear Science;2023-09
4. High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications;Micromachines;2023-07-30
5. High-Resolution Alpha Spectrometry Using 4H-SiC Detectors: A Review of the State-of-the-Art;IEEE Transactions on Nuclear Science;2023-05
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