Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors-Reference-Cited by-同舟云学术

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Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors

Published:2022-04 Issue: Volume:584 Page:126566
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Karadavut OmerFaruk,Chaudhuri Sandeep K.,Kleppinger Joshua W.,Nag Ritwik,Mandal Krishna C.

Funder

Office of Nuclear Energy

University of South Carolina

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference50 articles.

1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Roccaforte;Microelectron. Eng.,2018

2. Hard X-ray and -ray spectroscopy at high tempratures using a COTS SiC photdiode;Bodie;Nucl. Instrum. Meth. Phys. Res. A.,2021

3. Demonstration of 4H-SiC JFET digital ICs across 1000 °C temperature range without change to input voltages;Neudeck;Mater. Sci. Forum.,2019

4. Silicon carbide detector for laser-generated plasma radiation;Bertuccio;Appl. Surf. Sci.,2013

5. Development of high sensitivity 4H–SiC detectors for fission neutron pulse shape measurements;Wu;Rev. Sci. Instrum.,2017

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Resolution Metal-Oxide-4H-SiC Radiation Detectors: A Review;IEEE Transactions on Nuclear Science;2024-08

2. Self-Biased Mo/n-4H-SiC Schottky Barriers as High-Performance Ultraviolet Photodetectors;IEEE Electron Device Letters;2023-05

3. Investigation of Ni/Y2O3/n-4H-SiC metal-oxide-semiconductor structure for high-resolution radiation detection;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV;2022-10-04

4. Enhanced Hole Transport in Ni/Y₂O₃/n-4H-SiC MOS for Self-Biased Radiation Detection;IEEE Electron Device Letters;2022-09

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