Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment-Reference-Cited by-同舟云学术

Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Published:2022-06 Issue:6 Volume:43 Page:838-841
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ruan Dun-Bao¹^ORCID,Chang-Liao Kuei-Shu²^ORCID,Liu Chih-Wei²,Lee Yao-Jen³,Chien Yu-Hsuan²,Kuo Bo-Lien²,Chiu Yu-Chuan⁴,Gan Kai-Jhih⁴,Hsu Chih-Chieh⁴,Liu Po-Tsun⁴^ORCID

Affiliation:

1. College of Physics and Information Engineering, Fuzhou University, Fuzhou, China

2. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan

3. Taiwan Semiconductor Research Institute, Tainan City, Taiwan

4. Department of Photonics and the Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9780621/09768833.pdf?arnumber=9768833

Reference31 articles.

1. Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O3 Treatment

2. Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION;su;Proc Symp VLSI Technol,2017

3. 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation;zhang;IEDM Tech Dig,2011

4. Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation

5. A Bandpass Filter Incorporated Into the Inductor Current Feedback Path for Improving Dynamic Performance of the Front-End DC–DC Converter in Two-Stage Inverter

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1. High performance junctionless FDSOI SiGe channel p-FinFET with high ION/IOFF ratio and excellent SS;Materials Science in Semiconductor Processing;2024-03

2. InSnO:N homojunction thin-film transistors fabricated at room temperature;Vacuum;2023-07

3. Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11

4. Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11

5. High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{\text{ON}}=2.0\ \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=1\mathrm{V}, \mathrm{S}.\mathrm{S}.=64\ \text{mV}/\text{dec},\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and $\text{Voltage}\ \text{Gain}=90\ \mathrm{V}/\mathrm{V}$ by Using High Pressure Supercritical Fluid Hydroxide Oxidation;2023 Silicon Nanoelectronics Workshop (SNW);2023-06-11