Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment-Reference-Cited by-同舟云学术

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Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 Silicon Nanoelectronics Workshop (SNW)
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Author:

Chen Wei-Ren¹,Ruan Dun-Bao²,Chang-Liao Kuei-Shu¹,Wang Hao-Yan¹,Luo Guang-Li³,Chiu Yu-Chuan⁴,Kuan Ting-Kai¹,Liu Po-Tsun⁴

Affiliation:

1. National Tsing Hua University,Department of Engineering and System Science,Taiwan

2. College of Physics and Information Engineering, Fuzhou University,CHINA

3. Taiwan Semiconductor Research Institute,Taiwan

4. Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University,Department of Photonics,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10183871/10183917/10183954.pdf?arnumber=10183954

Reference6 articles.

1. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

2. Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characteristics of Si0.7Ge0.3/Si heterostructure-based n-type GAA MOSFETs;Microelectronic Engineering;2024-09

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