Impact of In-Plane Residual Stress on The Performance of The Film Bulk Acoustic Resonators
Author:
Affiliation:
1. Institute of Microelectronics,Agency for Science, Technology and Research (A*STAR),Singapore
Funder
Science and Engineering Research Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10306337/10306342/10306787.pdf?arnumber=10306787
Reference9 articles.
1. A Snapshot in Time: The Future in Filters for Cell Phones
2. Sub-100nm Al0.7Sc0.3N Thin Films for Next Generation Bulk Acoustic Wave Resonators and Filters
3. A comparison of FBAR oscillators with standard resonators and stress relieved resonators
4. Residual stress reduction in piezoelectric Sc0.4Al0.6N films by variable-pressure sputtering from 0.4 to 1.0 Pa
5. The impact of residual stress on resonating piezoelectric devices
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1. A Comprehensive Approach for Total Suppression of In-Band Spurious Modes in UHF Al0.72Sc0.28N Lamb Wave Resonators and Filters;Journal of Microelectromechanical Systems;2024-08
2. Highly Doped Single Crystal Al$_{\text{1}-\textit{x}}$Sc$_{\textit{x}}$N Bulk Acoustic Resonators for High-Frequency and Wideband Applications;IEEE Transactions on Electron Devices;2024
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