An improved termination structure for silicon radiation detectors with all-P-type multiguard and cut-line implants
Author:
Affiliation:
1. Divisione Microsistemi, Ist. per la Ricerca Sci. e Tecnologica, Trento, Italy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx5/23/27445/01221911.pdf?arnumber=1221911
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultra-large scale array silicon pixel sensors with uniform and low leakage current for advanced X-ray light sources;Journal of Instrumentation;2024-04-01
2. An Advanced Double SOI CMOS Pixel Detector Termination With Trench Interspace;IEEE Sensors Journal;2015-07
3. Guard Ring Simulations for n-on-p Silicon Particle Detectors;IEEE Transactions on Nuclear Science;2010-10
4. Total dose dependence of oxide charge, interstrip capacitance and breakdown behavior of sLHC prototype silicon strip detectors and test structures of the SMART collaboration;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2007-09
5. Investigation of the radiation tolerance of all-P-type termination structures for silicon detectors;IEEE Transactions on Nuclear Science;2004-08
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