Abstract
Abstract
The development of silicon pixel sensors (SPS) with high
operating voltage, low leakage currents, and large arrays can
contribute to improving the energy and spatial resolution of
advanced X-ray light source detection systems. The Future Detection
System comprises a hybrid-pixel detector with a collective
resolution of 2048 × 2048 pixels, each measuring
100 μm× 100 μm. It consists of 16 p-i-n
SPSs, where each sensor has an array size of 1024× 256
pixels. In this paper, the design of the pixel and guard rings is
optimized to achieve uniform and ultra-low pixels leakage currents
under high operating voltage. The high leakage current uniformity of
the designed sensor is demonstrated through several tests conducted
on small scale array SPS. The leakage current of the tested pixels
is in the range of 0.50–0.55 pA at room temperature with less than
5% leakage deviation on the whole array. It is accompanied by
breakdown voltages greater than 1000 V. The optimized
256× 128 pixel SPS showcases uniform leakage currents below
0.6 pA per pixel at room temperature, as evidence in both the edge
and central pixels. The 1024× 256 pixels SPS is then
manufactured based on the optimized design results. The obtained
results show that the breakdown voltage is greater than 1000 V and
the leakage current of the pixel is less than 2.5 pA. In addition,
the interpixel capacitance of the sensor also reach an ultra-low
level of 16 fF. This study paves the way for the development of a
robust semiconductor device solution for applications where
ultra-fast and large panel-pixel detectors in advanced X-ray light
source detection systems are required.