Total dose dependence of oxide charge, interstrip capacitance and breakdown behavior of sLHC prototype silicon strip detectors and test structures of the SMART collaboration

Author:

Sadrozinski H.F.-W.,Betancourt C.,Heffern R.,Henderson I.,Pixley J.,Polyakov A.,Wilder M.,Boscardin M.,Piemonte C.,Pozza A.,Zorzi N.,Dalla Betta G.-F.,Resta G.,Bruzzi M.,Macchiolo A.,Borrello L.,Messineo A.,Creanza D.,Manna N.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Analysis of interstrip capacitance of p+n MCz Si microstrip detector using TCAD simulation combining surface and bulk damage effects by mixed irradiation;Radiation Effects and Defects in Solids;2023-04-27

2. Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor;Journal of Applied Physics;2014-05-28

3. Full three-dimensional simulations of optimized active pixel detector for ionizing particle detection;Acta Physica Sinica;2014

4. Simulation studies of the n+n− Si sensors having p-spray/p-stop implant for the SiD experiment;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-12

5. Optimization of surface structures in n-in-p silicon sensors using TCAD simulation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2011-04

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