A 18 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs-Reference-Cited by-同舟云学术

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A 18 GHz Broadband Stacked FET Power Amplifier Using 130 nm Metamorphic HEMTs

Published:2009-12 Issue:12 Volume:19 Page:828-830
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Lee Choonghee,Kim Youngmin,Koh Yumin,Kim Jihoon,Seo Kwangseok,Jeong Jinho,Kwon Youngwoo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/5320183/05320184.pdf?arnumber=5320184

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT;Micromachines;2023-06-20

2. Space-Compliant Design of a Millimeter-Wave GaN-on-Si Stacked Power Amplifier Cell through Electro-Magnetic and Thermal Simulations;Electronics;2021-07-26

3. A mHEMT Power-Reconfigurable Distributed Amplifier Using a Gain Cell Switching Technique;IEEE Access;2021

4. Design and analysis of monolithic triple-stacked power amplifiers using GaAs HBT-HEMT process;IEICE Electronics Express;2020-07-10

5. Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2019-09

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