Design and analysis of monolithic triple-stacked power amplifiers using GaAs HBT-HEMT process-Reference-Cited by-同舟云学术

Design and analysis of monolithic triple-stacked power amplifiers using GaAs HBT-HEMT process

Published:2020-07-10 Issue:13 Volume:17 Page:20200172-20200172
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Shen Chih-Chun¹,Chen Wei-Cheng¹,Chang Hong-Yeh¹

Affiliation:

1. Dept. of Electrical Engineering, National Central University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/17/13/17_17.20200172/_pdf

Reference30 articles.

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3. [3] C.-C. Shen, et al.: “A broadband stacked power amplifier using 2-μm GaAs HBT process for C-band applications,” 2008 Asia Pacific Microw. Conf. Proc. (2008) (DOI: 10.1109/APMC.2008.4958388).

4. [4] D. Fritsche, et al.: “Analysis and design of a stacked power amplifier with very high bandwidth,” IEEE Trans. Microw. Theory Techn. 60 (2012) 3223 (DOI: 10.1109/TMTT.2012.2209439).

5. [5] K. Datta, et al.: “A triple-stacked class-E mm-wave SiGe HBT power amplifier,” IEEE MTTS Int. Microw. Symp. Digest (2013) 151 (DOI: 10.1109/MWSYM.2013.6697457).

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