A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz-Reference-Cited by-同舟云学术

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A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz

Published:2006-01 Issue:1 Volume:16 Page:22-24
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Hongtao Xu ,Gao S.,Heikman S.,Long S.I.,Mishra U.K.,York R.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/33145/01561306.pdf?arnumber=1561306

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of a broadband high-efficiency power amplifier based on continuous class-EF mode;IEICE Electronics Express;2024-03-25

2. A High Efficiency Class-E Power Amplifier with Tuned Output Network;2023 9th International Conference on Signal Processing and Communication (ICSC);2023-12-21

3. Graph Analytic Method to Design a Class E Power Amplifier Operating in Frequency Band;2023 International Conference on Electrical Engineering and Photonics (EExPolytech);2023-10-19

4. A 3.1 W High Gain 51% Fractional Bandwidth GaN HEMT Power Amplifier Design for Far-Field Wireless Power Transfer (WPT) Applications;2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS);2023-04-19

5. Application of harmonic included CPL‐QPHD model of GaN device for broadband PA design;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-21

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