A 3.1 W High Gain 51% Fractional Bandwidth GaN HEMT Power Amplifier Design for Far-Field Wireless Power Transfer (WPT) Applications
Author:
Affiliation:
1. The University of Texas at Dallas,Department of Electrical and Computer Engineering,Richardson,TX,USA
Funder
Defense Advanced Research Projects Agency (DARPA)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10193881/10194256/10194258.pdf?arnumber=10194258
Reference10 articles.
1. Computer-Aided Design of Microstrip Couplers with Accurate Discontinuity Models
2. Design and development of (1.2-2.7) GHz GaN HEMT based broadband power amplifier
3. Design of a Dual-Mode Balun Bandpass Filter With High Selectivity
4. Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology
5. Applications of SiC MESFETs and GaN HEMTs in power amplifier design
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Far-Field Wireless Power Beaming to Mobile Receivers Using Distributed, Coherent Phased Arrays: A Review of the Critical Components of a Distributed Wireless Power Beaming System;IEEE Microwave Magazine;2024-05
2. A 78% High Power Added Efficiency Ultra-Wideband Class-E GaN HEMT Power Amplifier for Far-Field Wireless Power Beaming Applications;2024 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS);2024-04-03
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