Design of a broadband high-efficiency power amplifier based on continuous class-EF mode
Author:
Affiliation:
1. Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
2. The Institute of Electronics, Communications and Information Technology (ECIT), Queen’s University Belfast
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/21/6/21_21.20240044/_pdf
Reference32 articles.
1. [1] F. You, et al.: “An optimized-load-impedance calculation and mining method based on I-V curves: using broadband class-E power amplifier as example,” IEEE Trans. Ind. Electron. 66 (2019) 5254 (DOI: 10.1109/TIE.2018.2868020).
2. [2] F.J. Ortega-Gonzalez, et al.: “High power wideband class-E power amplifier,” IEEE Microw. Wireless Compon. Lett., 20 (2010) 569 (DOI: 10.1109/LMWC.2010.2064760).
3. [3] H. Xu, et al.: “A high-efficiency class-E GaN HEMT power amplifier at 1.9GHz,” IEEE Microw. Wireless Compon. Lett. 16 (2006) 22 (DOI: 10.1109/LMWC.2005.8 61355).
4. [4] O. Ceylan, et al.: “Tunable class-F high power amplifier at X-band using GaN HEMT,” Turkish J. Electr. Eng. Comput. Sci. 26 (2018) 2327 (DOI: 10.3906/elk-1803-71).
5. [5] V. Carrubba, et al.: “On the extension of the continuous class-F mode Power amplifier,” IEEE Trans. Microw. Theory Techn. 59 (2011) 1294 (DOI: 10.1109/TMTT.2011.2117435).
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