Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk-Reference-Cited by-同舟云学术

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Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Cai Yimao,Wang Zongwei,Yu Zhizhen,Ling Yaotian,Chen Qingyu,Yang Yunfan,Bao Shengyu,Wu Lindong,Bao Lin,Wang Runsheng,Huang Ru

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371968.pdf?arnumber=9371968

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array;IEEE Transactions on Electron Devices;2024-08

2. ASAP: An Efficient and Reliable Programming Algorithm for Multi-level RRAM Cell;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing;IEEE Transactions on Electron Devices;2024-01

4. Design Considerations of Multi-Level 1S1R Cell for In-Memory Computing;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27

5. Device-Architecture Co-optimization for RRAM-based In-memory Computing;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

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