Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI-Reference-Cited by-同舟云学术

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Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Neudeck P.,Spry D.,Krasowski M.,Chen L.,Prokop N.,Greer L.,Chang C.

Funder

Glenn Research Center

Science Mission Directorate

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371953.pdf?arnumber=9371953

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes;Journal of Vacuum Science & Technology B;2024-08-19

2. Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology;Advanced Materials Technologies;2024-08-07

3. High electron mobility in heavily sulfur-doped 4H-SiC;Journal of Applied Physics;2024-05-23

4. 4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C;Applied Physics Letters;2024-05-06

5. Formation of ohmic contacts on heavily Al⁺-implanted p-type SiC without an alloying process;Japanese Journal of Applied Physics;2024-05-01

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