Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results-Reference-Cited by-同舟云学术

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Published:2022-05-28 Issue: Volume: Page:
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Container-title:2022 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

Ding Luchang¹,Cai Chang¹,Chen Gengsheng¹,Wu Zehao¹,Zhang Jing¹,Wu Chang¹,Yu Jun¹

Affiliation:

1. Fudan University,State Key Laboratory of ASIC and System,Shanghai,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9937201/9937203/09937652.pdf?arnumber=9937652

Reference18 articles.

1. Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

2. Insights on Design and Scalability of Thin-BOX FD/SOI CMOS

3. Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations

4. SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell

5. Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs;bi;Proc IEEE International Reliability Physics Symposium,2013

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