A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices-Reference-Cited by-同舟云学术

A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices

Published:2024-04 Issue:4 Volume:71 Page:2373-2379
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hikake Kaito¹^ORCID,Li Zhuo¹^ORCID,Hao Junxiang¹^ORCID,Pandy Chitra¹^ORCID,Saraya Takuya¹,Hiramoto Toshiro¹^ORCID,Takahashi Takanori²,Uenuma Mutsunori²^ORCID,Uraoka Yukiharu²^ORCID,Kobayashi Masaharu¹^ORCID

Affiliation:

1. Institute of Industrial Science, The University of Tokyo, Tokyo, Japan

2. Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Japan

Funder

JST CREST

JST ASPIRE

JSPS KAKENHI

TSMC Advanced Semiconductor Research Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10466665.pdf?arnumber=10466665

Reference28 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating

3. Double-Gate W-Doped Amorphous Indium Oxide Transistors for Monolithic 3D Capacitorless Gain Cell eDRAM

4. Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application

5. 2-kbit array of 3-D monolithically-stacked IGZO FETs with low SS-64 mV/dec, ultra-low-leakage, competitive μ-57 cm2/V-s performance and novel nMOS-only circuit demonstration;Chand

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