Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating-Reference-Cited by-同舟云学术

Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating

Published:2023-02-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Yakubo Yuto¹,Furutani Kazuma¹,Toyotaka Kouhei¹,Katagiri Haruki¹,Fujita Masashi¹,Kozuma Munehiro¹,Ando Yoshinori¹,Kurokawa Yoshiyuki¹,Nakura Toru²,Yamazaki Shunpei¹

Affiliation:

1. Semiconductor Energy Laboratory,Atsugi,Japan

2. Fukuoka University,Fukuoka,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067603.pdf?arnumber=10067603

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3. 14.2 A Compute SRAM with Bit-Serial Integer/Floating-Point Operations for Programmable In-Memory Vector Acceleration

4. A 40nm 60.64TOPS/W ECC-Capable Compute-in-Memory/Digital 2.25MB/768KB RRAM/SRAM System with Embedded Cortex M3 Microprocessor for Edge Recommendation Systems

5. A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In–Ga–Zn Oxide BEOL-FETs

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