A 40nm 60.64TOPS/W ECC-Capable Compute-in-Memory/Digital 2.25MB/768KB RRAM/SRAM System with Embedded Cortex M3 Microprocessor for Edge Recommendation Systems
Author:
Affiliation:
1. Georgia Institute of Technology,Atlanta,GA
2. TSMC Corporate Research,Hsinchu,Taiwan
3. TSMC Design Technology,Hsinchu,Taiwan
Funder
Semiconductor Research Corporation
TSMC
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731679.pdf?arnumber=9731679
Reference7 articles.
1. A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121–28TOPS/W for Multibit MAC Computing for Tiny Al Edge Devices;xue;ISSCC,2020
2. A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based Al Edge Processors;xue;ISSCC,2019
3. 14.2 A Compute SRAM with Bit-Serial Integer/Floating-Point Operations for Programmable In-Memory Vector Acceleration
4. 33.1 A 74 TMACS/W CMOS-RRAM Neurosynaptic Core with Dynamically Reconfigurable Dataflow and In-situ Transposable Weights for Probabilistic Graphical Models
5. 29.1 A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification
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