Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design-Reference-Cited by-同舟云学术

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Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design

Published:2024-04 Issue:4 Volume:71 Page:2742-2748
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Najafi Deniz¹^ORCID,Morsali Mehrdad¹^ORCID,Zhou Ranyang¹,Roohi Arman²^ORCID,Marshall Andrew³,Misra Durga¹^ORCID,Angizi Shaahin¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA

2. School of Computing, University of Nebraska–Lincoln, Lincoln, NE, USA

3. Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, TX, USA

Funder

National Science Foundation

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/16/10482422/10440020-aam.pdf

Reference28 articles.

1. A New Design Paradigm for Auto-Nonvolatile Ternary SRAMs Using Ferroelectric CNTFETs: From Device to Array Architecture

2. Design and Evaluation of a Near-Sensor Magneto-Electric FET-Based Event Detector

3. Magneto-electric antiferromagnetic spin–orbit logic devices

4. MNFTL

5. Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid Magneto-electric FET-CMOS Integrated Memory Design for Instant-on Computing;Proceedings of the Great Lakes Symposium on VLSI 2024;2024-06-12

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