Affiliation:
1. Shenzhen Technology University, Shenzhen, China
2. Shenzhen University, Shenzhen, China
3. Shandong University, Qingdao, China
4. Shenzhen Research Institute of Tianjin University, Tianjin University
5. The Hong Kong Polytechnic University
6. The Chinese University of Hong Kong
Abstract
The write constraints of Multi-Level Cell (MLC) NAND flash memory make most of the existing flash translation layer (FTL) schemes inefficient or inapplicable. In this article, we solve several fundamental problems in the design of MLC flash translation layer. The objective is to reduce the garbage collection overhead to reduce the average system response time. We make the key observation that the valid pages copy is the essential garbage collection overhead. Based on this observation, we propose two approaches, namely, concentrated mapping and postponed reclamation, to effectively reduce the valid pages copy. Besides, we propose a progressive garbage collection that can well utilize the system idle time to reclaim more spaces. We conduct a series of experiments on an embedded developing board with a set of benchmarks. The experimental results show that our scheme can achieve a significant reduction in the average system response time compared with the previous work.
Funder
National Natural Science Foundation of China
Shenzhen Science and Technology Foundation
Guangdong Basic and Applied Basic Research Foundation
Research Grants Council of the Hong Kong Special Administrative Region, China
Fundamental Research Funds of Shandong University
Scientific Research Platforms and Projects in Universities in Guangdong Province
Direct Grant for Research, The Chinese University of Hong Kong
Natural Science Foundation of Tianjin
Publisher
Association for Computing Machinery (ACM)
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Reference45 articles.
1. Samsung. 2009. Samsung electronics. K9LBG08U0M(v1.0)-32GB DDP MLC data sheet. Retrieved from http://www.samsung.com. Samsung. 2009. Samsung electronics. K9LBG08U0M(v1.0)-32GB DDP MLC data sheet. Retrieved from http://www.samsung.com.
2. Samsung. 2009. Samsung electronics. Page program addressing for MLC NAND application note. Retrieved from http://www.samsung.com. Samsung. 2009. Samsung electronics. Page program addressing for MLC NAND application note. Retrieved from http://www.samsung.com.
3. Samsung. 2011. Samsung electronics. K9G4G08U0F 16Gb F-Die MLC NAND Flash Datasheet. Retrieved from https://datasheetspdf.com/pdf/776555/Samsung/K9GAG08U0F/6. Samsung. 2011. Samsung electronics. K9G4G08U0F 16Gb F-Die MLC NAND Flash Datasheet. Retrieved from https://datasheetspdf.com/pdf/776555/Samsung/K9GAG08U0F/6.
4. Amir Ban. 1995. Flash file system. U.S. patent 5 404 485. Amir Ban. 1995. Flash file system. U.S. patent 5 404 485.
5. A Block-Level Log-Block Management Scheme for MLC NAND Flash Memory Storage Systems
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献