High performance ion-implanted low noise GaAs MESFET's-Reference-Cited by-同舟云学术

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High performance ion-implanted low noise GaAs MESFET's

Published:1982-11 Issue:11 Volume:3 Page:327-329
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Feng M.,Eu V.K.,Kanber H.,Hackett R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31870/01482694.pdf?arnumber=1482694

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

2. State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET's and High-Performance Monolithic Amplifiers;IEEE Transactions on Microwave Theory and Techniques;1987-12

3. Optimization of ion‐implanted low noise GaAs metal‐semiconductor field effect transistors;Journal of Applied Physics;1984-08-15

4. Ultrahigh frequency operation of ion‐implanted GaAs metal‐semiconductor field‐effect transistors;Applied Physics Letters;1984-01-15

5. Infrared rapid thermal annealing for GaAs device fabrication;Journal of Applied Physics;1983-09

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